amplifier, power, 1w 5.0-9.0 ghz MAAPGM0030 m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 903239 ? preliminary information 1 features ? 1 watt saturated output power level ? variable drain voltage (4-10v) operation ? msag? process primary applications ? multiple band point-to-point radio ? satcom ? ism band description the MAAPGM0030 is a packaged, single stage, 1w power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. this product is fully matched to 50 ohms on both the input and output. it can be used as a power amplifier stage or as a driver stage in high power applications. each device is 100% rf tested to ensure performance compliance. the part is fabricated using m/a-com?s gaas multifunction self-aligned gate (msag?) process. m/a-com?s msag? process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low- noise, switch and digital fets on a single chip. the use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. parameter symbol absolute maximum units input power p in 23.0 dbm drain supply voltage v dd +12.0 v gate supply voltage v gg -3.0 v quiescent drain current (no rf, 40% idss) i dq 470 ma junction temperature t j 180 c storage temperature t stg -55 to +150 c quiescent dc power dissipated (no rf) p diss 3.2 w processing temperature 230 c absolute maximum conditions 1 apgm0030 ywwllll pin number rf designator 1 no connection 2 no connection 3 rf in 4 no connection 5 v gg 9 no connection 6 no connection 10 v dd 8 rf out 7 no connection 1. operation outside of these ranges may reduce product reliability.
amplifier, power, 1w 5.0-9.0 ghz MAAPGM0030 m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 903239 ? preliminary information 2 parameter symbol typical units bandwidth f 5.0-9.0 ghz output power pout 30 dbm power added efficiency pae 35 % 1-db compression point p1db 30 dbm small signal gain g 14 db input vswr vswr 1.8:1 output vswr vswr 2.0:1 gate supply current i gg < 4 ma drain supply current i dd < 500 ma noise figure nf 9 db 2 nd harmonic 2f -20 dbc 3 rd harmonic 3f -35 dbc 3 rd order intermodulation distortion, single carrier level = 21 dbm im3 -15 dbm 5 th order intermodulation distortion, single carrier level = 21 dbm im5 -36 dbm output third order intercept otoi 38 dbm electrical characteristics: t b = 40c, z 0 = 50 , v dd = 8v, i dq 300 ma 3 , p in = 18 dbm, r g 240 ? operating instructions this device is static sensitive. please handle with care. to operate the device, follow these steps. 1. apply v gg -1.8v, v dd = 0 v. 2. ramp v dd to desired voltage, typically 8 v. 3. adjust v gg to set i dq , (see note 3 above). 4. set rf input. 5. power down sequence in reverse. turn v gg off last. characteristic symbol min typ max unit drain supply voltage v dd 4.0 8.0 10.0 v gate supply voltage v gg -2.4 -2.0 -1.5 v input power p in 18 21 dbm junction temperature t j 150 c package base temperature t b note 2 c thermal resistance jc 28.4 c/w recommended operat ing conditions 2. maximum package base temperature = 150c ? jc * v dd * i dq 3. adjust v gg between ?2.4 to ?1.5v to achieve indicated i dq .
amplifier, power, 1w 5.0-9.0 ghz MAAPGM0030 m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 903239 ? preliminary information 3 0 10 20 30 40 50 45678910 drain voltage (v) 0 10 20 30 40 50 pout pae figure 2. saturated output power and power added efficiency vs. drain voltage at f o = 7 ghz. figure 1. output power and power added efficiency vs. frequency at v dd = 8v and pin = 18 dbm. 0 10 20 30 40 50 45678910 frequency (ghz) pout (dbm) 0 10 20 30 40 50 pae(%) pout pae figure 3. 1db compression point vs. drain voltage 0 10 20 30 40 50 45678910 frequency (ghz) vdd = 4 vdd = 6 v dd = 8 v dd = 10 5 10 15 20 25 30 4.04.55.05.56.06.57.07.58.08.59.09.510.0 frequency (ghz) 1 2 3 4 5 6 gain input vswr output vswr fi g ure 4. small si g nal gain and vswr vs. fre q uenc y at vdd = 8v.
amplifier, power, 1w 5.0-9.0 ghz MAAPGM0030 m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 903239 ? preliminary information 4 figure 5. cr-15 package dimensions the cr-15 is a high frequency, low thermal resi stance package. the pa ckage consists of a cofired ceramic construction with a copper-tungs ten base and iron-nickel-cobalt leads. the finish consists of electrolytic gold over nickel plate. apgm0030
amplifier, power, 1w 5.0-9.0 ghz MAAPGM0030 m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 903239 ? preliminary information 5 pin number rf designator 1 no connection 2 no connection 3 rf in 4 no connection 5 v gg 9 no connection 6 no connection 10 v dd 8 rf out 7 no connection figure 6. recommended bias configuration apgm0030 ywwllll assembly instructions: this flange mount style package provides a robust interface between a highly inte grated gaas mmic device and a circuit board which may be assembled using conventional surface mount techniques. a thin shim made of a thermally and electrically conductive, ductile material shoul d be used prior to installation of the cr-15 to improve the thermal and electrical performanc e of the package to housing interface. refer to m/a-com application note #m567* for more information . for applications where surface mount components are to be in stalled after the cr-15 installation, this package will not be damaged when subjected to typical convection or ir oven reflow profiles. refer to m/a-com application note #m538* for maximum allowable reflow time and temperature. alternativel y, the package leads may be individually soldered. whether an iron or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric sta tic discharge (esd) safe. * application notes can be found by going to the site search page on m/a-com?s web page (http://www.macom.com/search/search.jsp) and se arching for the required application note. biasing notes: ? a negative bias must be applied to v gg before applying a positive bias to v dd to prevent damage to the amplifier. rf out rf in 0.1 f v gg 0.1 f v dd r g see electrical characteristics- page 2
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